Sample 32

Run Data

	Process	carrier	HBr	Ar	Pressure mT	RF Power	ICP power	Temp	Time (min)	Sample# Res C
8	4	Si wafer - not bonded	50	0	5.0	100	250	20	10	32.0
9	9	Si wafer - not bonded	15	0	5.0	15	1500	20	10	32.0

Post Strip Micrograph

Dektak Pre/Post Resist Strip Comparison

N/A - Sample was not cleaned thoroughly enough to remove resist.

Possible to estimate the resist/semiconductor interface by change in slope however.

Total depth after etching is 15.651 um
Calculated remaining resist as 8.08um, indicating an erosion of 0.66um in 10 minutes of etching
This equates to an erosion rate of 66 nm/min
The etch depth of 7.57um in 10 mins indicates an etch rate of 757.0nm/min
The selectivity is therefore 11.47:1

	Result
Initial resist (um)	8.741000
Total depth after etch (um)	15.651300
Remaining resist (um)	8.081300
Semiconductor etched(um)	7.570000
Etch rate (nm/min)	757.000000
Erosion rate (nm/min)	65.970000
Selectivity	11.474913