Sample 32

Run Data

Process carrier HBr Ar Pressure mT RF Power ICP power Temp Time (min) Sample# Res C
8 4 Si wafer - not bonded 50 0 5.0 100 250 20 10 32.0
9 9 Si wafer - not bonded 15 0 5.0 15 1500 20 10 32.0

Post Strip Micrograph

Dektak Pre/Post Resist Strip Comparison

N/A - Sample was not cleaned thoroughly enough to remove resist.

Possible to estimate the resist/semiconductor interface by change in slope however.

Total depth after etching is 15.651 um
Calculated remaining resist as 8.08um, indicating an erosion of 0.66um in 10 minutes of etching
This equates to an erosion rate of 66 nm/min
The etch depth of 7.57um in 10 mins indicates an etch rate of 757.0nm/min
The selectivity is therefore 11.47:1
Result
Initial resist (um) 8.741000
Total depth after etch (um) 15.651300
Remaining resist (um) 8.081300
Semiconductor etched(um) 7.570000
Etch rate (nm/min) 757.000000
Erosion rate (nm/min) 65.970000
Selectivity 11.474913